New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors

Workshop on Defects in Wide Band Gap Semiconductors

Solar-blind UV detectors based on wide band gap semiconductors

Solid-state photon detectors based on semiconductors other than silicon are not yet considered mature technology but their current development opens new possibilities, also for space observations. Such devices are especially attractive for ultraviolet radiation detection, as semiconductor materials with band gaps larger than that of silicon can be produced and used as “visible-blind” or “solar-...

Low resistance ohmic contacts on wide band-gap GaN

We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n-GaN (--Or7 cme3) using an Ah% bilayer metallization scheme. Four different thin-film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron-beam evaporation onto the GaN su...

Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio.

We report a chemically conjugated bilayer graphene field effect transistor demonstrating a high on/off ratio without significant degradation of the on-current and mobility. This was realized by introducing environmentally stable benzyl viologen as an electron-donating group and atmospheric dopants as an electron-withdrawing group, which were used as dopants for the bottom and top of the bilayer...

Defects, Impurities and Doping Levels in Wide-Band-Gap Semiconductors

A fundamental understanding of the mechanisms governing the behavior of defects and impurities is essential to control doping in semiconductors. Wide-band-gap semiconductors, in particular, often exhibit doping-related problems. We discuss how rst-principles theoretical techniques can be applied to the calculation of formation energies and concentrations of native defects and dopant impurities....